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RN1710,LF

RN1710,LF

NPNX2 BRT Q1BSR4.7KOHM Q1BERINF.

RN1710,LF

RN1710,LF

Image is for reference, please contact us to get the real picture

Part No :

RN1710,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
NPNX2 BRT Q1BSR4.7KOHM Q1BERINF.
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
16000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250MHz
Power - Max:200mW
Mounting Type:Surface Mount
Package / Case:5-TSSOP, SC-70-5, SOT-353
Supplier Device Package:USV
RN1710,LF is available at GangBo-ic.com, Please review product page below for detailed information, including RN1710,LF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RN1710,LF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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