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NSBC115EPDXV6T1G

NSBC115EPDXV6T1G

SS SOT563 RSTR XSTR TR

NSBC115EPDXV6T1G

NSBC115EPDXV6T1G

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Part No :

NSBC115EPDXV6T1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
SS SOT563 RSTR XSTR TR
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
594559 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 19 - Apr 23 2025
PDF
NSBC115EPDXV6T1G PDF
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):100kOhms
Resistor - Emitter Base (R2):100kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:357mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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