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NSBA123JDXV6T1

NSBA123JDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

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NSBA123JDXV6T1

NSBA123JDXV6T1

Image is for reference, please contact us to get the real picture

Part No :

NSBA123JDXV6T1

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
171949 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 05 - Apr 09 2025
PDF
NSBA123JDXV6T1 PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):2.2kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:500mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
NSBA123JDXV6T1 is available at GangBo-ic.com, Please review product page below for detailed information, including NSBA123JDXV6T1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSBA123JDXV6T1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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