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EMH9T2R

EMH9T2R

TRANS 2NPN PREBIAS 0.15W EMT6

EMH9T2R

EMH9T2R

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Part No :

EMH9T2R

Manufacturer
ROHM Semiconductor
Description
TRANS 2NPN PREBIAS 0.15W EMT6
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
19640 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
EMH9T2R PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250MHz
Power - Max:150mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:EMT6
EMH9T2R is available at GangBo-ic.com, Please review product page below for detailed information, including EMH9T2R price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EMH9T2R to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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