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AMPMGEB-33.333333

AMPMGEB-33.333333

MEMS OSC XO 33.3333MHZ CMOS SMD

NSBA113EDXV6T1G

NSBA113EDXV6T1G

TRANS 2PNP PREBIAS 0.25W SOT563

NSBA113EDXV6T1G

NSBA113EDXV6T1G

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Part No :

NSBA113EDXV6T1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS 2PNP PREBIAS 0.25W SOT563
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
224322 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NSBA113EDXV6T1G PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):1kOhms
Resistor - Emitter Base (R2):1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
NSBA113EDXV6T1G is available at GangBo-ic.com, Please review product page below for detailed information, including NSBA113EDXV6T1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSBA113EDXV6T1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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