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SG-8018CA 156.0250M-TJHSA0

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XTAL OSC XO 156.0250MHZ CMOS SMD

RN2910FE,LF(CT

RN2910FE,LF(CT

TRANS 2PNP PREBIAS 0.1W ES6

RN2910FE,LF(CT

RN2910FE,LF(CT

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Part No :

RN2910FE,LF(CT

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS 2PNP PREBIAS 0.1W ES6
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
524252 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:200MHz
Power - Max:100mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:ES6
RN2910FE,LF(CT is available at GangBo-ic.com, Please review product page below for detailed information, including RN2910FE,LF(CT price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RN2910FE,LF(CT to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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