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EMH4T2R

EMH4T2R

TRANS 2NPN PREBIAS 0.15W EMT6

EMH4T2R

EMH4T2R

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Part No :

EMH4T2R

Manufacturer
ROHM Semiconductor
Description
TRANS 2NPN PREBIAS 0.15W EMT6
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
18000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 27 - Mar 03 2025
PDF
EMH4T2R PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA (ICBO)
Frequency - Transition:250MHz
Power - Max:150mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:EMT6
EMH4T2R is available at GangBo-ic.com, Please review product page below for detailed information, including EMH4T2R price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EMH4T2R to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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