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NSBA114EDXV6T5G

NSBA114EDXV6T5G

SMALL SIGNAL BIPOLAR TRANSISTOR

NSBA114EDXV6T5G

NSBA114EDXV6T5G

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Part No :

NSBA114EDXV6T5G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
48000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
NSBA114EDXV6T5G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:500mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
NSBA114EDXV6T5G is available at GangBo-ic.com, Please review product page below for detailed information, including NSBA114EDXV6T5G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSBA114EDXV6T5G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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