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RN1964TE85LF

RN1964TE85LF

TRANS 2NPN PREBIAS 0.2W US6

RN1964TE85LF

RN1964TE85LF

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Part No :

RN1964TE85LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS 2NPN PREBIAS 0.2W US6
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
12840 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 27 - Dec 31 2024
PDF
RN1964TE85LF PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):47kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250MHz
Power - Max:200mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6
RN1964TE85LF is available at GangBo-ic.com, Please review product page below for detailed information, including RN1964TE85LF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RN1964TE85LF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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