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EMF8T2R

EMF8T2R

TRANS NPN PREBIAS/NPN 0.15W EMT6

EMF8T2R

EMF8T2R

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Part No :

EMF8T2R

Manufacturer
ROHM Semiconductor
Description
TRANS NPN PREBIAS/NPN 0.15W EMT6
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
413641 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
PDF
EMF8T2R PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Not For New Designs
Transistor Type:1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max):100mA, 500mA
Voltage - Collector Emitter Breakdown (Max):50V, 12V
Resistor - Base (R1):47kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250MHz, 320MHz
Power - Max:150mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:EMT6
EMF8T2R is available at GangBo-ic.com, Please review product page below for detailed information, including EMF8T2R price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EMF8T2R to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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