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NSVMUN5312DW1T3G

NSVMUN5312DW1T3G

TRANS NPN/PNP 50V BIPO SC88-6

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NSVMUN5312DW1T3G

NSVMUN5312DW1T3G

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Part No :

NSVMUN5312DW1T3G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN/PNP 50V BIPO SC88-6
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
083608 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
NSVMUN5312DW1T3G PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):22kOhms
Resistor - Emitter Base (R2):22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
NSVMUN5312DW1T3G is available at GangBo-ic.com, Please review product page below for detailed information, including NSVMUN5312DW1T3G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSVMUN5312DW1T3G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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