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SIT1602BI-81-18E-32.768000T

SIT1602BI-81-18E-32.768000T

MEMS OSC XO 32.7680MHZ H/LV-CMOS

SIT1602BI-71-30S-66.666600G

SIT1602BI-71-30S-66.666600G

MEMS OSC XO 66.6666MHZ H/LV-CMOS

1N5226BE3

1N5226BE3

DIODE ZENER 3.3V 500MW DO35

IDSD-13-S-15.75

IDSD-13-S-15.75

INSULATION DISPLACEMENT TERMINAL

1N5226BE3

1N5226BE3

Image is for reference, please contact us to get the real picture

Part No :

1N5226BE3

Manufacturer
Roving Networks / Microchip Technology
Description
DIODE ZENER 3.3V 500MW DO35
Catalog
Diodes - Zener - Single
Availability
048804 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2025
PDF
1N5226BE3 PDF
Type Description
Series:-
Package:Bag
Part Status:Active
Voltage - Zener (Nom) (Vz):3.3 V
Tolerance:±5%
Power - Max:500 mW
Impedance (Max) (Zzt):28 Ohms
Current - Reverse Leakage @ Vr:25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 200 mA
Operating Temperature:-65°C ~ 175°C
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35 (DO-204AH)
1N5226BE3 is available at GangBo-ic.com, Please review product page below for detailed information, including 1N5226BE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 1N5226BE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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