DIODE ZENER 11V 1W DO213AB
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 11 V |
Tolerance: | ±5% |
Power - Max: | 1 W |
Impedance (Max) (Zzt): | 8 Ohms |
Current - Reverse Leakage @ Vr: | 5 µA @ 8.4 V |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 200 mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF |
Supplier Device Package: | DO-213AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CZRFR52C8V2-HFComchip Technology |
DIODE ZENER 8.2V 200MW 1005 |
|
SJPZ-K28Sanken Electric Co., Ltd. |
DIODE ZENER 28V 1W SJP |
|
BZT52C4V7S RRGTSC (Taiwan Semiconductor) |
DIODE ZENER 4.7V 200MW SOD323F |
|
SZBZX84C3V9ET3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 3.9V 225MW SOT23-3 |
|
BZG03B130-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 130V 1.25W DO214AC |
|
BZG05C43-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 1.25W DO214AC |
|
JAN1N4571A-1Roving Networks / Microchip Technology |
DIODE ZENER 6.4V 500MW DO35 |
|
1PMT4119E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 28V 1W DO216 |
|
JAN1N4122C-1Roving Networks / Microchip Technology |
DIODE ZENER 36V DO35 |
|
BZT52B16-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 410MW SOD123 |
|
BZD27C91PHMQGTSC (Taiwan Semiconductor) |
DIODE ZENER 90.5V 1W SUB SMA |
|
CZRFR52C6V2-HFComchip Technology |
DIODE ZENER 6.2V 200MW 1005 |
|
MMSZ5236C-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 500MW SOD123 |