DIODE ZENER 5.6V 500MW DO35
Type | Description |
---|---|
Series: | Military, MIL-PRF-19500/435 |
Package: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.6 V |
Tolerance: | ±5% |
Power - Max: | 500 mW |
Impedance (Max) (Zzt): | 1.4 kOhms |
Current - Reverse Leakage @ Vr: | 10 µA @ 4 V |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 200 mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BZT52-B5V1JNexperia |
DIODE ZENER 5.1V 590MW SOD123 |
|
1N4972Roving Networks / Microchip Technology |
DIODE ZENER 39V 5W AXIAL |
|
BZX84C24LT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 24V 225MW SOT23-3 |
|
BZD27C51P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 800MW DO219AB |
|
MMSZ4705-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 500MW SOD123 |
|
1N5257B-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 500MW DO35 |
|
1N4747A-T50ASanyo Semiconductor/ON Semiconductor |
DIODE ZENER 20V 1W DO41 |
|
SMBJ5367C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 43V 5W SMBJ |
|
JAN1N4106DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 12V DO213AA |
|
BZG04-56-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 1.25W DO214AC |
|
MAZ251000GPanasonic |
DIODE ZENER 51V 1W DO41 |
|
CDLL5251ARoving Networks / Microchip Technology |
DIODE ZENER 22V 10MW DO213AB |
|
JAN1N749CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 4.3V 500MW DO213AA |