DIODE ZENER 11V 500MW DO35
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 11 V |
Tolerance: | ±5% |
Power - Max: | 500 mW |
Impedance (Max) (Zzt): | 8 Ohms |
Current - Reverse Leakage @ Vr: | - |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 200 mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTE5251ANTE Electronics, Inc. |
DIODE ZENER 9.1V 50W DO5 |
|
BZD17C180P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 180V 800MW DO219AB |
|
1SMA5946HR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 75V 1.5W DO214AC |
|
UDZS24B RRGTSC (Taiwan Semiconductor) |
DIODE ZENER 24V 200MW SOD323F |
|
TZMC24-M-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 500MW SOD80 |
|
GDZ30B-HG3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 200MW SOD323 |
|
PLZ39B-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 500MW DO219AC |
|
BZD27B51P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 800MW DO219AB |
|
PZU9.1B,115Nexperia |
DIODE ZENER 9.1V 310MW SOD323F |
|
JANTXV1N4114D-1Roving Networks / Microchip Technology |
DIODE ZENER 20V 500MW DO35 |
|
PLZ4V7B-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 4.68V 960MW DO219AC |
|
MMBZ5261B-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 47V 225MW SOT23-3 |
|
CDLL5262Roving Networks / Microchip Technology |
DIODE ZENER 51V 10MW DO213AB |