DIODE ZENER 16V 500MW MINI MELF
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 16 V |
Tolerance: | ±5% |
Power - Max: | 500 mW |
Impedance (Max) (Zzt): | 40 Ohms |
Current - Reverse Leakage @ Vr: | 100 nA @ 12 V |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 10 mA |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | Mini MELF |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SZMM5Z18VT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 18V 500MW SOD523 |
|
BZX384C10-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 200MW SOD323 |
|
SMPZ3937B-M3/85AVishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 500MW DO220AA |
|
JANTX1N5542B-1Roving Networks / Microchip Technology |
DIODE ZENER 22V 500MW DO35 |
|
BZX84-C51,215Nexperia |
DIODE ZENER 51V 250MW TO236AB |
|
TZX5V1B-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 500MW DO35 |
|
MMBZ4625-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 350MW SOT23-3 |
|
BZT52C10-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 410MW SOD123 |
|
JANTXV1N5541D-1Roving Networks / Microchip Technology |
DIODE ZENER 22V 500MW DO35 |
|
MMBZ5250C-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 225MW SOT23-3 |
|
1N5942BE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 51V 1.5W DO204AL |
|
1N5249A (DO-35)Microsemi |
DIODE ZENER 19V 500MW DO35 |
|
MMSZ5266B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 500MW SOD123 |