Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 8.2 V |
Tolerance: | ±2% |
Power - Max: | 500 mW |
Impedance (Max) (Zzt): | 30 Ohms |
Current - Reverse Leakage @ Vr: | 500 nA @ 4 V |
Voltage - Forward (Vf) (Max) @ If: | - |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
JANTX1N3029CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 24V 1W DO213AB |
|
MMBZ4700-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 350MW SOT23-3 |
|
CDLL3019ARoving Networks / Microchip Technology |
DIODE ZENER 9.1V 1W DO213AB |
|
SZBZX84C3V3LT3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 3.3V 225MW SOT23-3 |
|
TZX8V2A-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 500MW DO35 |
|
1SMA4755HM2GTSC (Taiwan Semiconductor) |
DIODE ZENER 43V 1.25W DO214AC |
|
CDZT2RA16BROHM Semiconductor |
DIODE ZENER 16V 100MW VMN2 |
|
JANTX1N5523CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 500MW DO213AA |
|
TZMC56-M-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 500MW SOD80 |
|
BZX384B24-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 200MW SOD323 |
|
BZD17C56P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 800MW DO219AB |
|
1N5227B TR PBFREECentral Semiconductor |
DIODE ZENER 3.6V 500MW DO35 |
|
JANTX1N4620-1Roving Networks / Microchip Technology |
DIODE ZENER 3.3V 500MW DO35 |