DIODE ZENER 2.4V 410MW SOD123
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 2.4 V |
Tolerance: | ±2% |
Power - Max: | 410 mW |
Impedance (Max) (Zzt): | 85 Ohms |
Current - Reverse Leakage @ Vr: | - |
Voltage - Forward (Vf) (Max) @ If: | - |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MMBZ5248B-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 225MW SOT23-3 |
|
JANTX1N977DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 47V 500MW DO213AA |
|
BZT55C56-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 500MW SOD80 |
|
MMBZ5227C-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.6V 225MW SOT23-3 |
|
JANTXV1N4979USRoving Networks / Microchip Technology |
DIODE ZENER 75V 5W D5B |
|
JAN1N5521C-1Roving Networks / Microchip Technology |
DIODE ZENER 4.3V 500MW DO35 |
|
MM1Z4745ADiotec Semiconductor |
DIODE ZENER 16V 1W SOD123F |
|
BZX584B6V2 RSGTSC (Taiwan Semiconductor) |
DIODE ZENER 6.2V 150MW SOD523F |
|
1PMT4112/TR7Roving Networks / Microchip Technology |
DIODE ZENER 18V 1W DO216 |
|
JANTX1N5520CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3.9V 500MW DO213AA |
|
MMSZ4683-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3V 500MW SOD123 |
|
1N4744APE3/TR12Roving Networks / Microchip Technology |
DIODE ZENER 15V 1W DO204AL |
|
KDZVTR39AROHM Semiconductor |
DIODE ZENER 39V 1W PMDU |