DIODE ZENER 27V 3W DO216AA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 27 V |
Tolerance: | ±2% |
Power - Max: | 3 W |
Impedance (Max) (Zzt): | 23 Ohms |
Current - Reverse Leakage @ Vr: | 1 µA @ 20.6 V |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 200 mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | DO-216AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N5525B-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO35 |
|
BZX79-C9V1,143Nexperia |
DIODE ZENER 9.1V 400MW ALF2 |
|
1N5252B-TPMicro Commercial Components (MCC) |
DIODE ZENER 24V 500MW DO35 |
|
1N5235B A0GTSC (Taiwan Semiconductor) |
DIODE ZENER 6.8V 500MW DO35 |
|
BZX84J-B9V1,115Nexperia |
DIODE ZENER 9.1V 550MW SOD323F |
|
MMBZ5232B-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 225MW SOT23-3 |
|
BZT52C22-7-FZetex Semiconductors (Diodes Inc.) |
DIODE ZENER 22V 500MW SOD123 |
|
BZD17C8V2P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 800MW DO219AB |
|
MMSZ5237B-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 500MW SOD123 |
|
JANS1N4965USRoving Networks / Microchip Technology |
DIODE ZENER 20V 5W D5B |
|
GLL4761-E3/96Vishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 1W MELF |
|
ABZT52C4V3-HFComchip Technology |
DIODE ZENER 4.3V 500MW SOD123 |
|
BZD27C20P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 800MW DO219AB |