DIODE ZENER 5.6V 500MW ALF2
Type | Description |
---|---|
Series: | - |
Package: | Cut Tape (CT)Tape & Box (TB) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.6 V |
Tolerance: | ±2% |
Power - Max: | 500 mW |
Impedance (Max) (Zzt): | 40 Ohms |
Current - Reverse Leakage @ Vr: | 1 µA @ 2 V |
Voltage - Forward (Vf) (Max) @ If: | 1.5 V @ 200 mA |
Operating Temperature: | 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | ALF2 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CDLL4747ARoving Networks / Microchip Technology |
DIODE ZENER 20V DO213AB |
|
JANTX1N4372A-1Roving Networks / Microchip Technology |
DIODE ZENER 3V 500MW DO35 |
|
JAN1N4132UR-1Roving Networks / Microchip Technology |
DIODE ZENER 82V DO213AA |
|
BZG04-82-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 100V 1.25W DO214AC |
|
BZX79-C43,133Nexperia |
DIODE ZENER 43V 400MW ALF2 |
|
UDZS10B R9GTSC (Taiwan Semiconductor) |
DIODE ZENER 10V 200MW SOD323F |
|
1N4745AP/TR12Roving Networks / Microchip Technology |
DIODE ZENER 16V 1W DO204AL |
|
BZD27C8V2P-M-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 800MW DO219AB |
|
1N6026ARoving Networks / Microchip Technology |
DIODE ZENER 120V 500MW DO35 |
|
TZX13A-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 500MW DO35 |
|
BZG03B220-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 220V 1.25W DO214AC |
|
TZM5262B-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 500MW SOD80 |
|
BZV49-C3V0,115Nexperia |
DIODE ZENER 3V 1W SOT89 |