DIODE ZENER 33V 500MW ALF2
Type | Description |
---|---|
Series: | - |
Package: | Cut Tape (CT)Tape & Box (TB) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 33 V |
Tolerance: | ±2% |
Power - Max: | 500 mW |
Impedance (Max) (Zzt): | 120 Ohms |
Current - Reverse Leakage @ Vr: | 50 nA @ 23.1 V |
Voltage - Forward (Vf) (Max) @ If: | 1.5 V @ 200 mA |
Operating Temperature: | -55°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | ALF2 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTE5183AKNTE Electronics, Inc. |
DIODE ZENER 8.2V 10W DO4 |
|
BZX79-C7V5,143Nexperia |
DIODE ZENER 7.5V 400MW ALF2 |
|
BZG03B56-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 1.25W DO214AC |
|
SMBZ5941B-E3/52Vishay General Semiconductor – Diodes Division |
DIODE ZENER 47V 3W DO214AA |
|
BZX84W-C2V7XNexperia |
DIODE ZENER 2.7V 275MW SOT323 |
|
JAN1N4625C-1Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 500MW DO35 |
|
1N5987DRoving Networks / Microchip Technology |
DIODE ZENER 3V 500MW DO35 |
|
BZD27B7V5P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 800MW DO219AB |
|
1N4982USRoving Networks / Microchip Technology |
DIODE ZENER 100V 5W D5B |
|
UFZVFHTE-176.8BROHM Semiconductor |
DIODE ZENER 6.8V 500MW UMD2 |
|
CZRU12VBComchip Technology |
DIODE ZENER 12V 150MW 0603 |
|
JANTXV1N4977USRoving Networks / Microchip Technology |
DIODE ZENER 62V 5W D5B |
|
1PMT5935A/TR13Roving Networks / Microchip Technology |
DIODE ZENER 27V 3W DO216AA |