DIODE ZENER 51V 3W DO216AA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 51 V |
Tolerance: | ±2% |
Power - Max: | 3 W |
Impedance (Max) (Zzt): | 70 Ohms |
Current - Reverse Leakage @ Vr: | 1 µA @ 38.8 V |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 200 mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | DO-216AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BZT52H-C9V1,115Nexperia |
DIODE ZENER 9.1V 375MW SOD123F |
|
1N4759PE3/TR8Roving Networks / Microchip Technology |
DIODE ZENER 62V 1W DO204AL |
|
BZT55C12-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 500MW SOD80 |
|
1N3521ARoving Networks / Microchip Technology |
DIODE ZENER 13V 500MW DO35 |
|
1N4739ATRSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 9.1V 1W DO41 |
|
1N5935CPE3/TR8Roving Networks / Microchip Technology |
DIODE ZENER 28V 1.5W DO204AL |
|
1N5225BRLRochester Electronics |
DIODE ZENER 3V SILICON UNIDIREC |
|
MMSZ5248BT3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 18V 500MW SOD123 |
|
BZT52C3V6-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.6V 410MW SOD123 |
|
MMSZ5261C-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 47V 500MW SOD123 |
|
1PGSMA4762 M2GTSC (Taiwan Semiconductor) |
DIODE ZENER 82V 1.25W DO214AC |
|
JANTX1N753CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO213AA |
|
JAN1N5525D-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO35 |