DIODE ZENER 3.6V 1W DO213AB
Type | Description |
---|---|
Series: | Military, MIL-PRF-19500/115 |
Package: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 3.6 V |
Tolerance: | ±2% |
Power - Max: | 1 W |
Impedance (Max) (Zzt): | 10 Ohms |
Current - Reverse Leakage @ Vr: | 75 µA @ 1 V |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 200 mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB (MELF, LL41) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1PMT4102/TR7Roving Networks / Microchip Technology |
DIODE ZENER 8.7V 1W DO216 |
|
ZPY16-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 1.3W DO41 |
|
BZG03B62-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 62V 1.25W DO214AC |
|
1N5926P/TR12Roving Networks / Microchip Technology |
DIODE ZENER 11V 1.5W DO204AL |
|
HZS30NB4TD-ERochester Electronics |
DIODE ZENER 0.4W |
|
BZD27C22P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 800MW DO219AB |
|
JAN1N4118CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 27V DO213AA |
|
MMSZ5240B-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 500MW SOD123 |
|
BZT52B16-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 410MW SOD123 |
|
JANTX1N4616-1Roving Networks / Microchip Technology |
DIODE ZENER 2.2V 500MW DO35 |
|
ZMY18Diotec Semiconductor |
DIODE ZENER 18V 1.3W MELF |
|
BZD27B100P-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 100V 800MW DO219AB |
|
BZD17C3V6P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.6V 800MW DO219AB |