DIODE ZENER 2.7V 500MW DO35
Type | Description |
---|---|
Series: | Military, MIL-PRF-19500/435 |
Package: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 2.7 V |
Tolerance: | ±2% |
Power - Max: | 500 mW |
Impedance (Max) (Zzt): | 1.5 kOhms |
Current - Reverse Leakage @ Vr: | 500 nA @ 1 V |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 200 mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 (DO-204AH) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BZT52C36-F2-0000HF |
ZENER DIODE 36V 0.5W SOD-123 |
|
CDLL4688Roving Networks / Microchip Technology |
DIODE ZENER 4.7V 500MW DO213AA |
|
SMBJ5952C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 130V 2W SMBJ |
|
JAN1N4473DRoving Networks / Microchip Technology |
DIODE ZENER 22V 1.5W DO41 |
|
BZX384C7V5-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 200MW SOD323 |
|
1PGSMA4763HM2GTSC (Taiwan Semiconductor) |
DIODE ZENER 91V 1.25W DO214AC |
|
PLZ20C-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 500MW DO219AC |
|
1PGSMA4741HR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 11V 1.25W DO214AC |
|
JAN1N3045CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 110V 1W DO213AB |
|
JANTXV1N5525B-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO35 |
|
HZU20B1TRF-ERochester Electronics |
DIODE ZENER |
|
BZX384B6V8-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 200MW SOD323 |
|
1N5363BRLGSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 30V 5W AXIAL |