DIODE ZENER 31.1V 310MW SOD123
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 31.1 V |
Tolerance: | ±3% |
Power - Max: | 310 mW |
Impedance (Max) (Zzt): | 65 Ohms |
Current - Reverse Leakage @ Vr: | 50 nA @ 25 V |
Voltage - Forward (Vf) (Max) @ If: | 900 mV @ 10 mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BZX84J-C4V3,115Nexperia |
DIODE ZENER 4.3V 550MW SOD323F |
|
TZQ5228B-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 500MW SOD80 |
|
TZMB5V6-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 500MW SOD80 |
|
SJPZ-E20VSanken Electric Co., Ltd. |
DIODE ZENER 20V 1W SJP |
|
CDLL5518BRoving Networks / Microchip Technology |
DIODE ZENER 3.3V 500MW DO213AB |
|
BZX84C6V2ET1Sanyo Semiconductor/ON Semiconductor |
DIODE ZENER 6.2V 225MW SOT23-3 |
|
TZMB51-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 500MW SOD80 |
|
1N5750BRoving Networks / Microchip Technology |
DIODE ZENER 39V 500MW DO35 |
|
BZX384C20-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 200MW SOD323 |
|
BZG05C39-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 1.25W DO214AC |
|
SZ1SMB5919BT3GRochester Electronics |
ZENER DIODE, 5.6V, 5%, 0.55W, UN |
|
1PMT5951BE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 120V 3W DO216AA |
|
BZX84C18-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 300MW SOT23-3 |