DIODE ZENER 110V 10MW DO213AB
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 110 V |
Tolerance: | ±5% |
Power - Max: | 10 mW |
Impedance (Max) (Zzt): | 750 Ohms |
Current - Reverse Leakage @ Vr: | 100 nA @ 84 V |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 200 mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF |
Supplier Device Package: | DO-213AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
GLL4735A-E3/96Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 1W MELF |
|
JANTX1N4112-1Roving Networks / Microchip Technology |
DIODE ZENER 18V 500MW DO35 |
|
1N5923P/TR8Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 1.5W DO204AL |
|
BZX84B6V2-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 300MW SOT23-3 |
|
BZT52H-B39,115Nexperia |
DIODE ZENER 39V 375MW SOD123F |
|
BZT52H-C68,115Nexperia |
DIODE ZENER 68V 375MW SOD123F |
|
BZX55B8V2 A0GTSC (Taiwan Semiconductor) |
DIODE ZENER 8.2V 500MW DO35 |
|
BZX55B56-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 500MW DO35 |
|
MMSZ9V1T1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 9.1V 500MW SOD123 |
|
TSZU52C4V3 RGGTSC (Taiwan Semiconductor) |
DIODE ZENER 4.3V 150MW 0603 |
|
1PMT4130E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 68V 1W DO216 |
|
1SMB5938HM4GTSC (Taiwan Semiconductor) |
DIODE ZENER 36V 3W DO214AA |
|
BZV55-C51,115Nexperia |
DIODE ZENER 51V 500MW LLDS |