DIODE ZENER 12V 1W DO204AL
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 12 V |
Tolerance: | ±10% |
Power - Max: | 1 W |
Impedance (Max) (Zzt): | 9 Ohms |
Current - Reverse Leakage @ Vr: | 5 µA @ 9.1 V |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 200 mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1PMT4110E3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 16V 1W DO216 |
|
MMSZ5232BT1GRochester Electronics |
ZENER DIODE, 5.6V, 5%, 0.5W, UNI |
|
BZT52C20-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 410MW SOD123 |
|
PZU3.3BL,315Nexperia |
DIODE ZENER 3.3V 250MW DFN1006-2 |
|
JAN1N5525C-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO35 |
|
BZD27C160P MHGTSC (Taiwan Semiconductor) |
DIODE ZENER 162V 1W SUB SMA |
|
TDZ10J,115Nexperia |
DIODE ZENER 10V 500MW SOD323F |
|
1PMT4112E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 18V 1W DO216 |
|
BZD27B6V8P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 800MW DO219AB |
|
SMBZ5926B-E3/5BVishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 3W DO214AA |
|
JANTXV1N4127-1Roving Networks / Microchip Technology |
DIODE ZENER 56V 500MW DO35 |
|
BZD27C18P-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 800MW DO219AB |
|
MMSZ4707-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 500MW SOD123 |