SLEEVE, 1 IN DIA X 1 IN W
DIODE SCHOTTKY 40V 10A ITO220AC
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 600 mV @ 10 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 1 mA @ 40 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | ITO-220AB |
Operating Temperature - Junction: | -40°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIDC11D60SIC3IR (Infineon Technologies) |
DIODE SCHOTTKY 600V 4A WAFER |
|
R6101030XXYZPowerex, Inc. |
DIODE GEN PURP 1KV 300A DO205 |
|
HER108S-APMicro Commercial Components (MCC) |
DIODE GPP HE 1A A-405 |
|
NGTD15R65F2SWKSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 650V DIE |
|
RB055LA-40TFTRROHM Semiconductor |
DIODE SCHOTTKY 40V 3A PMDT |
|
1N3614GP-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO-204AL |
|
SIDC14D60F6X1SA3IR (Infineon Technologies) |
DIODE SWITCHING 600V WAFER |
|
LSR103-J0 L0TSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A MELF |
|
12FR10B BN BK RVishay / Semiconductor - Opto Division |
DIODE GEN PURP 100V 12A DO203AA |
|
56DN06ELEMXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 600V 6400A |
|
IRD3CH24DD6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
|
CRNB20-1200PTSensata Technologies – Crydom |
DIODE GP 1.2KV 12.7A TO220AB |
|
1N5404-AZetex Semiconductors (Diodes Inc.) |
DIODE GPP 3A DO-201AD |