Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Diode Type: | - |
Voltage - DC Reverse (Vr) (Max): | - |
Current - Average Rectified (Io): | - |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | - |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | - |
Mounting Type: | - |
Package / Case: | - |
Supplier Device Package: | - |
Operating Temperature - Junction: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
GP10WE-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO204AL |
|
SIDC50D60C6X1SA1IR (Infineon Technologies) |
DIODE GEN PURP 600V 200A WAFER |
|
SRA255-TPMicro Commercial Components (MCC) |
DIODE |
|
AIDW30E60IR (Infineon Technologies) |
DIODE GEN PURP 600V 30A TO247-3 |
|
HBL2010BRPSanyo Semiconductor/ON Semiconductor |
1 CHANNEL ESD PROTECTOR |
|
GP10KE-M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO204AL |
|
SX110S040S6OUVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V |
|
1A7-APMicro Commercial Components (MCC) |
DIODE GEN PURP 1KV 1A R-1 |
|
CPD93V-1N4150-CTCentral Semiconductor |
SWITCHING DIODE |
|
IRD3CH53DF6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
|
1N5415USRoving Networks / Microchip Technology |
DIODE GEN PURP 50V 3A D5B |
|
1SS4009HHTE61ROHM Semiconductor |
DIODE GENERAL PURPOSE SMD |
|
NGTD15R65F2WPSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 650V DIE |