DIODE GEN PURP 150V 600MA TS-1
Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150 V |
Current - Average Rectified (Io): | 600mA |
Voltage - Forward (Vf) (Max) @ If: | 950 mV @ 600 mA |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 15 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 150 V |
Capacitance @ Vr, F: | 9pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | TS-1 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CLH06(TE16L,Q)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 300V 5A L-FLAT |
|
AK 06Sanken Electric Co., Ltd. |
DIODE SCHOTTKY 60V 700MA AXIAL |
|
HER102S-TPMicro Commercial Components (MCC) |
DIODE GPP HE 1A A-405 |
|
DB2631100LPanasonic |
DIODE GEN PURP 30V 200MA SOD882 |
|
CR3-010GPP BKCentral Semiconductor |
DIODE GENERAL PURPOSE DO-201AD |
|
1N5402GTASMC Diode Solutions |
DIODE GEN PURP 200V 3A DO201AD |
|
JAN1N6845U3Roving Networks / Microchip Technology |
DIODE SCHOTTKY 45V 30A U3 |
|
5819SMGE3/TR13Microsemi |
DIODE SCHOTTKY 40V 1A DO215AA |
|
IRD3CH9DD6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
|
IRD3CH16DF6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
|
SS14-6605HE3J_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 1A DO214AC |
|
RL105GP-APMicro Commercial Components (MCC) |
DIODE RECTUFUER 1A A-405 |
|
1SS400ZTTE61ROHM Semiconductor |
DIODE GENERAL PURPOSE SMD |