DIODE GEN PURP 200V 1A R-1
Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | R-1, Axial |
Supplier Device Package: | R-1 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SS34-3HE3_B/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 3A DO214AB |
|
DSA2I100SBWickmann / Littelfuse |
DIODE SCHOTTKY 100V 2A SMB |
|
SS36-7001HE3_B/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 3A DO214AB |
|
1N4005GPE-M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO-204AL |
|
IRKE71/06AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 80A ADDAPAK |
|
GP10A-5016M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO204AL |
|
APT50SCE65BMicrosemi |
DIODE SCHOTTKY 650V 50A TO247 |
|
RB520S-30FJTE61ROHM Semiconductor |
DIODE SCHOTTKY SMD |
|
F1T5G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A TS-1 |
|
1N646-1Roving Networks / Microchip Technology |
DIODE GEN PURP 300V 400MA DO35 |
|
VS-VSKE270-08Vishay General Semiconductor – Diodes Division |
DIODE GP 800V 270A MAGNAPAK |
|
SRA253GP-TPMicro Commercial Components (MCC) |
DIODE |
|
RGP10J-5025M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO-204AL |