DIODE GEN PURP 1.2KV 25A DO4
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 25A |
Voltage - Forward (Vf) (Max) @ If: | 1.55 V @ 60 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 4 mA @ 1200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-4 |
Operating Temperature - Junction: | -40°C ~ 180°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CTLSH1-40M621H BKCentral Semiconductor |
DIODE SCHOTTKY DFN6 |
|
5819SMG/TR13Microsemi |
DIODE SCHOTTKY 40V 1A DO215AA |
|
R9G20415ASOOPowerex, Inc. |
DIODE GP 400V 1500A DO200AB |
|
APD360VPTR-E1Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY |
|
180NQ045RVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 180A HALFPAK |
|
R9G22009ASOOPowerex, Inc. |
DIODE FAST REC R9G 900A 2000V |
|
EC30FA20KYOCERA Corporation |
DIODE FAST RECOVERY 200V 3A DO-2 |
|
SIDC81D120H6X1SA2IR (Infineon Technologies) |
DIODE GEN PURP 1.2KV 150A WAFER |
|
RL104-N-2-4-APMicro Commercial Components (MCC) |
DIODE GEN PURP 400V 1A A-405 |
|
SIDC14D60E6X1SA4IR (Infineon Technologies) |
DIODE SWITCHING 600V WAFER |
|
1N3613GP-M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO-204AL |
|
JANTX1N5419USRoving Networks / Microchip Technology |
DIODE GEN PURP 500V 3A D5B |
|
CLS02(T6L,CANO-O,QToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 40V 10A L-FLAT |