DIODE GEN PURP 75V 300MA UB
Type | Description |
---|---|
Series: | Military, MIL-PRF-19500/578 |
Package: | Bulk |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 75 V |
Current - Average Rectified (Io): | 300mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 100 mA |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 20 ns |
Current - Reverse Leakage @ Vr: | 500 nA @ 75 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | 3-UB (3.09x2.45) |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
F1T2G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A TS-1 |
|
S1A-13-GZetex Semiconductors (Diodes Inc.) |
DIODE GENERAL PURPOSE SMA |
|
1H6G-TPMicro Commercial Components (MCC) |
DIODE HI EFF R-2 |
|
RB751S-407HGTE61ROHM Semiconductor |
DIODE SCHOTTKY SMD |
|
RB031B-40TLROHM Semiconductor |
DIODE SCHOTTKY CPD |
|
SIDC05D60C8X7SA2IR (Infineon Technologies) |
DIODE GEN PURP 600V 15A WAFER |
|
JAN1N3600Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 200MA DO7 |
|
GI811-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO204AC |
|
IRD3CH31DD6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
|
MDO1200-18N1Wickmann / Littelfuse |
DIODE GEN PURP 1.8KV Y1-CU |
|
RL102-N-0-4-APMicro Commercial Components (MCC) |
DIODE GEN PURP 100V 1A A-405 |
|
70UR60 G BK RVishay / Semiconductor - Opto Division |
DIODE GEN PURP 600V 250A DO205AB |
|
JANTXV1N914Roving Networks / Microchip Technology |
DIODE GEN PURP 75V 200MA DO35 |