Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 45 V |
Current - Average Rectified (Io): | 120A |
Voltage - Forward (Vf) (Max) @ If: | 650 mV @ 120 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 10 mA @ 45 V |
Capacitance @ Vr, F: | 5200pF @ 5V, 1MHz |
Mounting Type: | Chassis Mount |
Package / Case: | D-67 HALF-PAK |
Supplier Device Package: | D-67 |
Operating Temperature - Junction: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RL254GP-APMicro Commercial Components (MCC) |
DIODE GPP 2.5A R-3 |
|
FCSP0530TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 500MA FLIPKY |
|
5818SMGE3/TR13Microsemi |
DIODE SCHOTTKY 30V 1A DO215AA |
|
TVR06J-5700M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO-204AL |
|
1N4004G BKCentral Semiconductor |
DIODE GEN PURP 400V 1A DO41 |
|
JANTXV1N6625Roving Networks / Microchip Technology |
DIODE GEN PURP 1.1KV 1A D5A |
|
RFN3B2STLROHM Semiconductor |
DIODE GEN PURPOSE CPD |
|
RU 3BSanken Electric Co., Ltd. |
DIODE GEN PURP 800V 1.1A AXIAL |
|
RB521S-309HKTE61ROHM Semiconductor |
DIODE SCHOTTKY SMD |
|
IRD3CH24DF6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
|
1N4004SP AP-RPCUCentral Semiconductor |
DIODE GEN PURPOSE DO41 |
|
DHF30IM600PNWickmann / Littelfuse |
DIODE GEN PURP 600V 15A TO220FP |
|
SS35-1HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 3A SMD |