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BYV30JT-600PQ

BYV30JT-600PQ

DIODE GEN PURP 600V 30A TO-3P

BYV30JT-600PQ

BYV30JT-600PQ

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Part No :

BYV30JT-600PQ

Manufacturer
WeEn Semiconductors Co., Ltd
Description
DIODE GEN PURP 600V 30A TO-3P
Catalog
Diodes - Rectifiers - Single
Availability
330033 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
Type Description
Series:-
Package:Tube
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):65 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:-
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3P
Operating Temperature - Junction:175°C (Max)
BYV30JT-600PQ is available at GangBo-ic.com, Please review product page below for detailed information, including BYV30JT-600PQ price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BYV30JT-600PQ to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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Phone: 00852-52612101

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