DIODE GEN PURP 800V 1A TS-1
Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 500 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 800 V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | TS-1 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
GP10M-7009M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE DO204AL |
|
RA354-BPMicro Commercial Components (MCC) |
DIODE |
|
SD103BW-7-F-36Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 350MA SOD123 |
|
FR1B-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 100V 1A DO214AA |
|
VS-95-9989PBFVishay General Semiconductor – Diodes Division |
DIODE GENERAL PURPOSE TO220 |
|
D121K20BXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 2KV 210A |
|
NA05HSA065KYOCERA Corporation |
DIODE SCHOTTKY 65V 5A DO-221BC |
|
LLSD103B-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 30V 350MA MINMELF |
|
BAS16-7-GZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP SOT23-3 |
|
F1T4G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A TS-1 |
|
RDS82580XXPowerex, Inc. |
DIODE GEN PURP 2.5KV 8000A |
|
IRD3CH31DF6IR (Infineon Technologies) |
DIODE CHIP EMITTER CONTROLLED |
|
EC10QS06KYOCERA Corporation |
DIODE SCHOTTKY 60V 1A DO-214AC |