Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 40A |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 5 µs |
Current - Reverse Leakage @ Vr: | 10 µA @ 400 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Operating Temperature - Junction: | -65°C ~ 200°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N4148UR-1/TRRoving Networks / Microchip Technology |
GLASS AXIAL SWITCHING DIODE |
|
UFS505JE3/TR13Roving Networks / Microchip Technology |
DIODE ULT FAST 5A 50V SMCJ |
|
S25JGeneSiC Semiconductor |
DIODE GEN PURP 600V 25A DO203AA |
|
JTXV1N6078Semtech |
D MET 3A SFST 150V HRV |
|
VS-45LR20Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 150A DO205AC |
|
R7010404XXUAPowerex, Inc. |
DIODE GEN PURP 400V 450A DO200AA |
|
UFS580GE3/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 5A DO215AB |
|
VSSAF3M6-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 3A DO221AC |
|
CCR257Microsemi |
CURRENT REGULATOR CHIP |
|
CMH02A(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 400V 3A M-FLAT |
|
1N6761Roving Networks / Microchip Technology |
DIODE SCHOTTKY DO-41 |
|
SR6133RLGRochester Electronics |
REC SURM SPECIAL TR |
|
1N4459RRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 15A DO203AA |