DIODE GEN PURP 200V 1A AXIAL
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 970 mV @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 10 µA @ 200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | - |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
JANTX1N1186RRoving Networks / Microchip Technology |
SILICON RECTIFIER |
|
HSM5100G/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 100V 5A DO215AB |
|
VS-60HFUR-300Vishay General Semiconductor – Diodes Division |
DIODE FAST 200V 60A DO203AB |
|
NRVBSS13HESanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY SOD323-2 |
|
CDBJSC101700-GComchip Technology |
DIODE SIC 10A 1700V TO-220-2 |
|
HSM560G/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 60V 5A DO215AB |
|
SRT15 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 1A TS-1 |
|
1N2135AGeneSiC Semiconductor |
DIODE GEN PURP 400V 60A DO5 |
|
VS-95PF160Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 95A DO203AB |
|
A190NPowerex, Inc. |
DIODE GEN PURP 800V 250A DO205AA |
|
SFT16GHA1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A TS-1 |
|
ES 1V0Sanken Electric Co., Ltd. |
DIODE GEN PURP 400V 700MA AXIAL |
|
CRH02(TE85L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 200V 500MA S-FLAT |