Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 30A |
Voltage - Forward (Vf) (Max) @ If: | 930 mV @ 15 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 20 µA @ 100 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-204AA (TO-3) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
WNSC051200QWeEn Semiconductors Co., Ltd |
SILICON CARBIDE POWER DIODE |
|
V1FM12HM3/HVishay General Semiconductor – Diodes Division |
1A 120V SMF TRENCH SKY RECT |
|
1N1615Roving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
JANTXV1N5186Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 3A AXIAL |
|
1N3288ARPowerex, Inc. |
DIODE GEN PURP 100V 100A DO205AA |
|
SS26F-HFComchip Technology |
DIODE SCHOTTKY 2A 60V SMAF |
|
HSK120TL-S-ERochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |
|
RGF1KHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE 800V SMD |
|
UPS180E3/TR7Roving Networks / Microchip Technology |
DIODE SCHOTTKY 1A 80V POWERMITE |
|
BAW156/ZL215Rochester Electronics |
RECTIFIER DIODE |
|
F60ASemtech |
DIODE GEN PURP 6KV 100MA AXIAL |
|
S3DHM3_A/HVishay General Semiconductor – Diodes Division |
3A 200V SMC STD GPP SM RECT |
|
EU02ZWSanken Electric Co., Ltd. |
DIODE GEN PURP 200V 1A AXIAL |