SIC DIODE TO220 650V
MINI BASIC SWITCH
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 10.1A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 8 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 40 µA @ 650 V |
Capacitance @ Vr, F: | 336pF @ 1V, 100kHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
PCFFS20120AFSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 20A 1200V DIE |
![]() |
VS-70HFLR60S02MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 70A DO203AB |
![]() |
JANTXV1N5416USRoving Networks / Microchip Technology |
DIODE GEN PURP 100V 3A D5B |
![]() |
VS-40HFR20MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 40A DO203AB |
![]() |
SD040SB100A.T1SMC Diode Solutions |
PIV 100V IO 1A CHIP SIZE 40MIL S |
![]() |
1N3766GeneSiC Semiconductor |
DIODE GEN PURP 800V 35A DO5 |
![]() |
SS210HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 1.5A DO214AA |
![]() |
MBR6060RGeneSiC Semiconductor |
DIODE SCHOTTKY REV 60V DO5 |
![]() |
VS-95PF140Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.4KV 95A DO203AB |
![]() |
MUR5040GeneSiC Semiconductor |
DIODE GEN PURP 400V 50A DO5 |
![]() |
R9G01822XXPowerex, Inc. |
DIODE GP 1.8KV 2200A DO200AB |
![]() |
1N3912ARoving Networks / Microchip Technology |
FAST RECOVERY RECTIFIER |
![]() |
DPG10IM300UC-TUBWickmann / Littelfuse |
POWER DIODE DISCRETES-FRED TO-25 |