DIODE GEN PURP 600V 10A TO220FP
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 2.35 V @ 10 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 15 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FPAB |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
F1T4G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A TS-1 |
|
SS35HE3_B/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 3A DO214AB |
|
RM 2ZVSanken Electric Co., Ltd. |
DIODE GEN PURP 200V 1.2A AXIAL |
|
EGL34FHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 500MA DO213 |
|
ES2CB-HFComchip Technology |
RECTIFIER SUPER FAST RECOVERY 15 |
|
FR85MR05GeneSiC Semiconductor |
DIODE GEN PURP REV 1KV 85A DO5 |
|
S6QGeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 6A DO4 |
|
VS-150U80DLVishay General Semiconductor – Diodes Division |
DIODE GP 800V 150A DO-8 |
|
1N1203BRoving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
R7000403XXUAPowerex, Inc. |
DIODE GEN PURP 400V 300A DO200AA |
|
SBM30-03-TR-ERochester Electronics |
SCHOTTKY DIODE |
|
B0540WSHE3-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 40V 500MA SOD323 |
|
R5030810RSWAPowerex, Inc. |
DIODE GEN PURP 800V 100A DO205AA |