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JANTX1N5809US

JANTX1N5809US

DIODE GEN PURP 100V 3A B-MELF

JANTX1N5809US

JANTX1N5809US

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Part No :

JANTX1N5809US

Manufacturer
Roving Networks / Microchip Technology
Description
DIODE GEN PURP 100V 3A B-MELF
Catalog
Diodes - Rectifiers - Single
Availability
042504 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
JANTX1N5809US PDF
Type Description
Series:Military, MIL-PRF-19500/477
Package:Bulk
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:60pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, B
Supplier Device Package:B, SQ-MELF
Operating Temperature - Junction:-65°C ~ 175°C
JANTX1N5809US is available at GangBo-ic.com, Please review product page below for detailed information, including JANTX1N5809US price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for JANTX1N5809US to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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