DIODE GEN PURP 60V 10A TO251
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 60 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 700 mV @ 10 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 150 µA @ 60 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251 |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
JANTXV1N5417USRoving Networks / Microchip Technology |
DIODE GEN PURP 200V 3A D5B |
|
RU 3AMVSanken Electric Co., Ltd. |
DIODE GEN PURP 600V 1.5A AXIAL |
|
FR40G05GeneSiC Semiconductor |
DIODE GEN PURP 400V 40A DO5 |
|
NRVBSS16HESanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY SOD323-2 |
|
LSM140G/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 40V 1A DO215AA |
|
BYM12-100HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
|
DD350N12K-KRochester Electronics |
RECTIFIER DIODE MODULE |
|
1N4720Roving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
R2540Roving Networks / Microchip Technology |
RECTIFIER |
|
EM01AV0Sanken Electric Co., Ltd. |
DIODE GEN PURP 600V 1A AXIAL |
|
RS3BB-HFComchip Technology |
RECTIFIER FAST RECOVERY 100V 3A |
|
EGL41GHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
SR1504HR0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 15A R-6 |