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JAN1N6630US

JAN1N6630US

DIODE GEN PURP 900V 1.4A E-MELF

JAN1N6630US

JAN1N6630US

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Part No :

JAN1N6630US

Manufacturer
Roving Networks / Microchip Technology
Description
DIODE GEN PURP 900V 1.4A E-MELF
Catalog
Diodes - Rectifiers - Single
Availability
361836 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
JAN1N6630US PDF
Type Description
Series:Military, MIL-PRF-19500/590
Package:Bulk
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):900 V
Current - Average Rectified (Io):1.4A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:2 µA @ 900 V
Capacitance @ Vr, F:-
Mounting Type:Surface Mount
Package / Case:SQ-MELF, E
Supplier Device Package:D-5B
Operating Temperature - Junction:-65°C ~ 150°C
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