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IDC51D120T6MX1SA3

IDC51D120T6MX1SA3

DIODE GEN PURP 1.2KV 100A WAFER

IDC51D120T6MX1SA3

IDC51D120T6MX1SA3

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Part No :

IDC51D120T6MX1SA3

Manufacturer
IR (Infineon Technologies)
Description
DIODE GEN PURP 1.2KV 100A WAFER
Catalog
Diodes - Rectifiers - Single
Availability
551455 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 02 - Mar 06 2025
PDF
IDC51D120T6MX1SA3 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):100A
Voltage - Forward (Vf) (Max) @ If:2.05 V @ 100 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:18 µA @ 1200 V
Capacitance @ Vr, F:-
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Sawn on foil
Operating Temperature - Junction:-40°C ~ 175°C
IDC51D120T6MX1SA3 is available at GangBo-ic.com, Please review product page below for detailed information, including IDC51D120T6MX1SA3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IDC51D120T6MX1SA3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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