DIODE GEN PURP 800V 1A 2010
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 µA @ 800 V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, No Lead |
Supplier Device Package: | 2010 |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-VSKE71/10Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 80A ADDAPAK |
|
VS-VSKE166/12PBFVishay General Semiconductor – Diodes Division |
DIODE GP 1.2KV 165A INTAPAK |
|
1N4150UR-1/TRRoving Networks / Microchip Technology |
SWITCHING |
|
FR40GR05GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 40A DO5 |
|
AK 06VSanken Electric Co., Ltd. |
DIODE SCHOTTKY 60V 700MA AXIAL |
|
NXPSC04650DJWeEn Semiconductors Co., Ltd |
DIODE SCHOTTKY 650V 4A DPAK |
|
JTX1N5550USSemtech |
D MET 3A STD 200V HRV SM |
|
R7203506XXOOPowerex, Inc. |
DIODE GP 3.5KV 600A DO200AA R62 |
|
SM75FSemtech |
DIODE GEN PURP 7.5KV 290MA AXIAL |
|
U1B-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
|
1N5189USRoving Networks / Microchip Technology |
DIODE GEN PURP 500V 3A D5B |
|
R9G02212XXPowerex, Inc. |
DIODE GP 2.2KV 1200A DO200AB |
|
1N1351Roving Networks / Microchip Technology |
STANDARD RECTIFIER |