DIODE GEN PURP 300V 6A R-6
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300 V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 6 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 300 V |
Capacitance @ Vr, F: | 80pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | R6, Axial |
Supplier Device Package: | R-6 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
1N1345CRoving Networks / Microchip Technology |
STANDARD RECTIFIER |
![]() |
MBR3535RGeneSiC Semiconductor |
DIODE SCHOTTKY REV 35V DO4 |
![]() |
VS-42HFR80Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 40A DO203AB |
![]() |
V2P22L-M3/IVishay General Semiconductor – Diodes Division |
SCHOTTKY RECTIFIER 2A 200V SMP |
![]() |
MBR6030RGeneSiC Semiconductor |
DIODE SCHOTTKY REV 30V DO5 |
![]() |
JTXM19500/469-04Roving Networks / Microchip Technology |
RECTIFIER |
![]() |
MBR6045RGeneSiC Semiconductor |
DIODE SCHOTTKY REV 45V DO5 |
![]() |
R3560Roving Networks / Microchip Technology |
RECTIFIER |
![]() |
S85DRGeneSiC Semiconductor |
DIODE GEN PURP REV 200V 85A DO5 |
![]() |
A187RPDPowerex, Inc. |
DIODE GEN PURP REV 1.4KV DO205AA |
![]() |
JANTXV1N6864USRoving Networks / Microchip Technology |
DIODE SCHOTTKY 80V 3A DO213AA |
![]() |
VSSAF512HM3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 120V 5A DO221AC |
![]() |
A180RPDPowerex, Inc. |
DIODE GEN PURP 1.4KV 150A DO205 |