SILICON CARBIDE POWER DIODE
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.6 V @ 10 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 110 µA @ 1200 V |
Capacitance @ Vr, F: | 510pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247-2 |
Operating Temperature - Junction: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RKP204KP#R0Rochester Electronics |
DIODE FOR ANTENNA SWITCHING |
|
56DN06B02ELEMXPSA1IR (Infineon Technologies) |
STD THYR/DIODEN DISC |
|
R7S01808XXPowerex, Inc. |
DIODE GP 1.8KV 800A DO200AA R62 |
|
SFT13GHA1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 1A TS-1 |
|
1N3910ARRoving Networks / Microchip Technology |
FAST RECOVERY RECTIFIER |
|
A399DPowerex, Inc. |
DIODE FAST 400A 400V DO-200AA |
|
FSQS10A065KYOCERA Corporation |
DIODE SCHOTTKY 65V 10A TO-220 2P |
|
CS3G-E3/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
|
M2505MC200Wickmann / Littelfuse |
FAST DIODE |
|
JANTX1N5196Roving Networks / Microchip Technology |
DIODE GEN PURP 225V 200MA DO35 |
|
XBW1SS400-GTorex Semiconductor Ltd. |
SWITCHING DIODE |
|
1N1351ARoving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
LSM335GE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 35V 3A DO215AB |