ZRECTM 10A, 650V SIC SCHOTTKY DI
Type | Description |
---|---|
Series: | Z-Rec® |
Package: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 32A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 10 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 60 µA @ 650 V |
Capacitance @ Vr, F: | 460.5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
JTX1N5553Semtech |
D MET 3A STD 800V HR |
|
FSQS10A045KYOCERA Corporation |
DIODE SCHOTTKY 45V 10A TO-220 2P |
|
S3KB-HFComchip Technology |
RECTIFIER GEN PURP 800V 3A SMB |
|
A197BPowerex, Inc. |
DIODE GEN PURP 200V 250A DO205AB |
|
JTX1N5807USSemtech |
D MET 6A SFST 50V HR 6FFX |
|
HER601G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 6A R-6 |
|
R7200409XXOOPowerex, Inc. |
DIODE GEN PURP 400V 900A DO200AB |
|
CMS16(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 40V 3A MFLAT |
|
BAS20W RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 200MA SOT323 |
|
1N3893ARRoving Networks / Microchip Technology |
FAST RECOVERY RECTIFIER |
|
RHRU7570Rochester Electronics |
RECTIFIER DIODE |
|
TUAS8G M3GTSC (Taiwan Semiconductor) |
8A, 400V, STANDARD RECOVERY RECT |
|
R6002025XXYAPowerex, Inc. |
DIODE GEN PURP 2KV 250A DO205 |