DIODE GEN PURP 100V 3A AXIAL
Type | Description |
---|---|
Series: | Military, MIL-PRF-19500/477 |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 875 mV @ 4 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 30 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 100 V |
Capacitance @ Vr, F: | 60pF @ 10V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | B, Axial |
Supplier Device Package: | - |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
R7004003XXUAPowerex, Inc. |
DIODE GEN PURP 4KV 300A DO200 |
|
VS-88HF120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 85A DO203AB |
|
1N3211RGeneSiC Semiconductor |
DIODE GEN PURP REV 300V 15A DO5 |
|
EM 2V0Sanken Electric Co., Ltd. |
DIODE GEN PURP 400V 1.2A AXIAL |
|
FR20K05GeneSiC Semiconductor |
DIODE GEN PURP 800V 20A DO5 |
|
S70YGeneSiC Semiconductor |
DIODE GEN PURP 1.6KV 70A DO5 |
|
JAN1N3671RRoving Networks / Microchip Technology |
DIODE GEN PURP 800V 12A DO203AA |
|
NRTS860PFST3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 8A 60V TO277-3 |
|
VS-EPH3007L-N3Vishay General Semiconductor – Diodes Division |
RECTIFIER HYPERFAST 30A TO-247AD |
|
1N3909RRoving Networks / Microchip Technology |
FAST RECOVERY RECTIFIER |
|
1N3297ARGeneSiC Semiconductor |
DIODE GEN PURP REV 1.4KV DO205AA |
|
SD175SA45A.T2SMC Diode Solutions |
PIV 45V IO 30A CHIP SIZE 175MIL |
|
VS-245NQ015PBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 15V 240A D-67 |